IRFIB5N65A

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Width :

4.83mm

Length :

10.63mm

Vgs (Max) :

±30V

Element Configuration :

Single

Turn On Delay Time :

14 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

650V

Packaging :

Tube

Continuous Drain Current (ID) :

5.1A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Max Operating Temperature :

150°C

Input Capacitance (Ciss) (Max) @ Vds :

1417pF @ 25V

Input Capacitance :

1.417nF

Supplier Device Package :

TO-220-3

Min Operating Temperature :

-55°C

Height :

9.8mm

Lead Free :

Contains Lead

Package / Case :

TO-220-3 Full Pack, Isolated Tab

Fall Time (Typ) :

18 ns

Drain to Source Resistance :

930mOhm

Mount :

Through Hole

Rds On (Max) @ Id, Vgs :

930mOhm @ 3.1A, 10V

Radiation Hardening :

No

Rise Time :

20ns

Mounting Type :

Through Hole

Weight :

6.000006g

RoHS Status :

Non-RoHS Compliant

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

5.1A Tc

Drain to Source Voltage (Vdss) :

650V

Turn-Off Delay Time :

34 ns

Number of Elements :

1

Power Dissipation-Max :

60W Tc

Rds On Max :

930 mΩ

Number of Pins :

3

Vgs(th) (Max) @ Id :

4V @ 250µA

Current Rating :

5.1A

Gate Charge (Qg) (Max) @ Vgs :

48nC @ 10V

Power Dissipation :

60W

Gate to Source Voltage (Vgs) :

30V

Number of Channels :

1

Published :

2016

Operating Temperature :

-55°C~150°C TJ