IRFIB5N50LPBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V

Number of Terminations :

3

Weight :

6.000006g

Height :

9.8mm

Fall Time (Typ) :

10 ns

Number of Elements :

1

Number of Channels :

1

Pin Count :

3

Number of Pins :

3

Continuous Drain Current (ID) :

4.7A

REACH SVHC :

Unknown

Turn-Off Delay Time :

26 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±30V

Rds On (Max) @ Id, Vgs :

800m Ω @ 2.4A, 10V

Current - Continuous Drain (Id) @ 25°C :

4.7A Tc

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-220-3 Full Pack, Isolated Tab

Power Dissipation-Max :

42W Tc

Mounting Type :

Through Hole

Drain to Source Breakdown Voltage :

500V

Qualification Status :

Not Qualified

Packaging :

Tube

Width :

4.83mm

Drain-source On Resistance-Max :

0.8Ohm

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

1000pF @ 25V

Published :

2009

JEDEC-95 Code :

TO-220AB

Rise Time :

17ns

Mount :

Through Hole

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Threshold Voltage :

5V

Turn On Delay Time :

13 ns

Gate to Source Voltage (Vgs) :

30V

Element Configuration :

Single

Vgs(th) (Max) @ Id :

5V @ 250μA

Length :

10.63mm