IRFIB41N15DPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Mounting Type :

Through Hole

Width :

4.826mm

Vgs (Max) :

±20V

Series :

HEXFET®

Drain-source On Resistance-Max :

0.045Ohm

RoHS Status :

ROHS3 Compliant

Current Rating :

41A

Packaging :

Tube

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

41A Tc

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

2520pF @ 25V

Rise Time :

63ns

Rds On (Max) @ Id, Vgs :

45m Ω @ 25A, 10V

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

3

Package / Case :

TO-220-3 Full Pack

Avalanche Energy Rating (Eas) :

470 mJ

JEDEC-95 Code :

TO-220AB

Turn-Off Delay Time :

25 ns

Additional Feature :

AVALANCHE RATED

Nominal Vgs :

5.5 V

Operating Temperature :

-55°C~175°C TJ

Drain to Source Breakdown Voltage :

150V

Voltage - Rated DC :

150V

Number of Pins :

3

Length :

10.6172mm

Factory Lead Time :

14 Weeks

Height :

16.12mm

Element Configuration :

Single

Radiation Hardening :

No

ECCN Code :

EAR99

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Fall Time (Typ) :

14 ns

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Dual Supply Voltage :

150V

Gate to Source Voltage (Vgs) :

30V

Mount :

Through Hole

Threshold Voltage :

5.5V

Case Connection :

Isolated

Power Dissipation :

200W

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Turn On Delay Time :

16 ns

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

40

Power Dissipation-Max :

48W Tc

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Continuous Drain Current (ID) :

41A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2003

REACH SVHC :

No SVHC

Operating Mode :

ENHANCEMENT MODE