IRFIB41N15DPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current Rating :

41A

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

260

Radiation Hardening :

No

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

REACH SVHC :

No SVHC

Current - Continuous Drain (Id) @ 25°C :

41A Tc

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

5.5V @ 250µA

ECCN Code :

EAR99

Avalanche Energy Rating (Eas) :

470 mJ

Voltage - Rated DC :

150V

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~175°C TJ

Power Dissipation-Max :

48W Tc

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rise Time :

63ns

Turn-Off Delay Time :

25 ns

Factory Lead Time :

14 Weeks

Mount :

Through Hole

Power Dissipation :

200W

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Published :

2003

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

2520pF @ 25V

Drain-source On Resistance-Max :

0.045Ohm

Rds On (Max) @ Id, Vgs :

45m Ω @ 25A, 10V

Length :

10.6172mm

Threshold Voltage :

5.5V

Additional Feature :

AVALANCHE RATED

Package / Case :

TO-220-3 Full Pack

Element Configuration :

Single

Number of Terminations :

3

Lead Free :

Lead Free

Series :

HEXFET®

Height :

16.12mm

Width :

4.826mm

Number of Pins :

3

JESD-609 Code :

e3

Continuous Drain Current (ID) :

41A

Gate to Source Voltage (Vgs) :

30V

Dual Supply Voltage :

150V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

16 ns

Drain to Source Breakdown Voltage :

150V

Vgs (Max) :

±20V

Packaging :

Tube

JEDEC-95 Code :

TO-220AB

Time@Peak Reflow Temperature-Max (s) :

40

RoHS Status :

ROHS3 Compliant

Nominal Vgs :

5.5 V

Fall Time (Typ) :

14 ns

Case Connection :

Isolated