IRFI9Z34GPBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

120ns

Power Dissipation-Max :

42W Tc

Gate to Source Voltage (Vgs) :

20V

Input Capacitance :

1.1nF

Mount :

Through Hole

Turn-Off Delay Time :

20 ns

Radiation Hardening :

No

Packaging :

Tube

Number of Pins :

3

Number of Elements :

1

Resistance :

140mOhm

Supplier Device Package :

TO-220-3

Element Configuration :

Single

Drain to Source Resistance :

140mOhm

Operating Temperature :

-55°C~175°C TJ

Fall Time (Typ) :

58 ns

Current Rating :

-12A

REACH SVHC :

Unknown

Package / Case :

TO-220-3 Full Pack, Isolated Tab

Drain to Source Breakdown Voltage :

-60V

Continuous Drain Current (ID) :

-12A

Drain to Source Voltage (Vdss) :

60V

Threshold Voltage :

-4V

Voltage - Rated DC :

-60V

Lead Free :

Lead Free

Nominal Vgs :

-4 V

Turn On Delay Time :

18 ns

Rds On Max :

140 mΩ

Height :

9.8mm

Number of Channels :

1

Vgs (Max) :

±20V

Factory Lead Time :

8 Weeks

Power Dissipation :

42W

Min Operating Temperature :

-55°C

Gate Charge (Qg) (Max) @ Vgs :

34nC @ 10V

Rds On (Max) @ Id, Vgs :

140mOhm @ 7.2A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Width :

4.83mm

Weight :

6.000006g

Mounting Type :

Through Hole

Length :

10.63mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

1997

Current - Continuous Drain (Id) @ 25°C :

12A Tc

FET Type :

P-Channel

Max Operating Temperature :

175°C

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

4V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

1100pF @ 25V