IRFI9Z24N

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.175Ohm

Rds On (Max) @ Id, Vgs :

175m Ω @ 5.4A, 10V

Transistor Element Material :

SILICON

Series :

HEXFET®

Peak Reflow Temperature (Cel) :

225

Package / Case :

TO-220-3 Full Pack

Number of Terminations :

3

Mounting Type :

Through Hole

Published :

1997

Pulsed Drain Current-Max (IDM) :

48A

Vgs (Max) :

±20V

Case Connection :

Isolated

JEDEC-95 Code :

TO-220AB

Operating Temperature (Max) :

175°C

RoHS Status :

Non-RoHS Compliant

Qualification Status :

Not Qualified

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 10V

DS Breakdown Voltage-Min :

55V

Packaging :

Tube

Power Dissipation-Max :

29W Tc

Avalanche Energy Rating (Eas) :

96 mJ

FET Type :

P-Channel

Drain Current-Max (Abs) (ID) :

9.5A

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Current - Continuous Drain (Id) @ 25°C :

9.5A Tc

Vgs(th) (Max) @ Id :

4V @ 250µA

ECCN Code :

EAR99

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSFM-T3

Terminal Position :

Single

Surface Mount :

No

Drain to Source Voltage (Vdss) :

55V

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Finish :

Tin/Lead (Sn/Pb)

Number of Elements :

1

JESD-609 Code :

e0

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

350pF @ 25V

Configuration :

SINGLE WITH BUILT-IN DIODE