IRFI9Z14GPBF
- Mfr.Part #
- IRFI9Z14GPBF
- Manufacturer
- Vishay
- Package / Case
- TO-220-3 Full Pack, Isolated Tab
- Datasheet
- Download
- Description
- MOSFET P-CH 60V 5.3A TO220-3
- Stock
- 97,553
- In Stock :
- 97,553
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Through Hole
- Gate to Source Voltage (Vgs) :
- 20V
- Input Capacitance :
- 270pF
- Fall Time (Typ) :
- 31 ns
- Power Dissipation-Max :
- 27W Tc
- Turn On Delay Time :
- 11 ns
- Height :
- 9.8mm
- Min Operating Temperature :
- -55°C
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Supplier Device Package :
- TO-220-3
- Published :
- 2008
- Lead Free :
- Lead Free
- Turn-Off Delay Time :
- 9.6 ns
- Rds On (Max) @ Id, Vgs :
- 500mOhm @ 3.2A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 12nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 270pF @ 25V
- Voltage - Rated DC :
- -60V
- Current Rating :
- -5.3A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Continuous Drain Current (ID) :
- -5.3A
- Length :
- 10.63mm
- Current - Continuous Drain (Id) @ 25°C :
- 5.3A Tc
- Power Dissipation :
- 27W
- Element Configuration :
- Single
- Max Operating Temperature :
- 175°C
- Mount :
- Through Hole
- Factory Lead Time :
- 8 Weeks
- Width :
- 4.83mm
- Operating Temperature :
- -55°C~175°C TJ
- Package / Case :
- TO-220-3 Full Pack, Isolated Tab
- Number of Channels :
- 1
- Weight :
- 6.000006g
- Drain to Source Voltage (Vdss) :
- 60V
- RoHS Status :
- ROHS3 Compliant
- FET Type :
- P-Channel
- Rds On Max :
- 500 mΩ
- Drain to Source Breakdown Voltage :
- -60V
- Number of Pins :
- 3
- Rise Time :
- 63ns
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Vgs (Max) :
- ±20V
- Drain to Source Resistance :
- 500MOhm
- Packaging :
- Tube
- Datasheets
- IRFI9Z14GPBF

P-Channel Tube 500mOhm @ 3.2A, 10V ±20V 270pF @ 25V 12nC @ 10V 60V TO-220-3 Full Pack, Isolated Tab
IRFI9Z14GPBF Overview
The maximum input capacitance of this device is 270pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is -5.3A.When VGS=-60V, and ID flows to VDS at -60VVDS, the drain-source breakdown voltage is -60V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 9.6 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 500mOhm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 11 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 60V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IRFI9Z14GPBF Features
a continuous drain current (ID) of -5.3A
a drain-to-source breakdown voltage of -60V voltage
the turn-off delay time is 9.6 ns
single MOSFETs transistor is 500mOhm
a 60V drain to source voltage (Vdss)
IRFI9Z14GPBF Applications
There are a lot of Vishay Siliconix
IRFI9Z14GPBF applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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