IRFI9634GPBF
- Mfr.Part #
- IRFI9634GPBF
- Manufacturer
- Vishay
- Package / Case
- TO-220-3 Full Pack, Isolated Tab
- Datasheet
- Download
- Description
- MOSFET P-CH 250V 4.1A TO220-3
- Stock
- 6,961
- In Stock :
- 6,961
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Number of Channels :
- 1
- Max Operating Temperature :
- 150°C
- Input Capacitance :
- 680pF
- Element Configuration :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 38nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Drain Current (ID) :
- 4.1A
- Radiation Hardening :
- No
- Fall Time (Typ) :
- 21 ns
- Threshold Voltage :
- -4V
- Input Capacitance (Ciss) (Max) @ Vds :
- 680pF @ 25V
- Power Dissipation :
- 35W
- Mounting Type :
- Through Hole
- Rds On (Max) @ Id, Vgs :
- 1Ohm @ 2.5A, 10V
- Number of Pins :
- 3
- Rds On Max :
- 1 Ω
- Nominal Vgs :
- -4 V
- Min Operating Temperature :
- -55°C
- Published :
- 2014
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-220-3 Full Pack, Isolated Tab
- Drain to Source Breakdown Voltage :
- -250V
- Current - Continuous Drain (Id) @ 25°C :
- 4.1A Tc
- Mount :
- Through Hole
- Rise Time :
- 23ns
- Turn-Off Delay Time :
- 34 ns
- Packaging :
- Tube
- Lead Free :
- Lead Free
- Turn On Delay Time :
- 12 ns
- Factory Lead Time :
- 8 Weeks
- Length :
- 10.63mm
- REACH SVHC :
- Unknown
- Weight :
- 6.000006g
- Height :
- 9.8mm
- Operating Temperature :
- -55°C~150°C TJ
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation-Max :
- 35W Tc
- Width :
- 4.83mm
- Vgs (Max) :
- ±20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Supplier Device Package :
- TO-220-3
- Drain to Source Voltage (Vdss) :
- 250V
- FET Type :
- P-Channel
- Resistance :
- 1Ohm
- Drain to Source Resistance :
- 1Ohm
- Number of Elements :
- 1
- Datasheets
- IRFI9634GPBF

P-Channel Tube 1Ohm @ 2.5A, 10V ±20V 680pF @ 25V 38nC @ 10V 250V TO-220-3 Full Pack, Isolated Tab
IRFI9634GPBF Overview
A device's maximal input capacitance is 680pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 4.1A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is -250V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 34 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 1Ohm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 12 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a -4V threshold voltage.This transistor requires a 250V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IRFI9634GPBF Features
a continuous drain current (ID) of 4.1A
a drain-to-source breakdown voltage of -250V voltage
the turn-off delay time is 34 ns
single MOSFETs transistor is 1Ohm
a threshold voltage of -4V
a 250V drain to source voltage (Vdss)
IRFI9634GPBF Applications
There are a lot of Vishay Siliconix
IRFI9634GPBF applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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