IRFI9630G
- Mfr.Part #
- IRFI9630G
- Manufacturer
- Vishay
- Package / Case
- TO-220-3 Full Pack, Isolated Tab
- Datasheet
- Download
- Description
- MOSFET P-CH 200V 4.3A TO220-3
- Stock
- 13,487
- In Stock :
- 13,487
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mount :
- Through Hole
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- RoHS Status :
- Non-RoHS Compliant
- Max Operating Temperature :
- 150°C
- Rds On Max :
- 800 mΩ
- Input Capacitance (Ciss) (Max) @ Vds :
- 700pF @ 25V
- Turn On Delay Time :
- 12 ns
- Width :
- 4.8mm
- Turn-Off Delay Time :
- 28 ns
- Rds On (Max) @ Id, Vgs :
- 800mOhm @ 2.6A, 10V
- Radiation Hardening :
- No
- Power Dissipation-Max :
- 35W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 29nC @ 10V
- Drain to Source Breakdown Voltage :
- -200V
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C~150°C TJ
- Drain to Source Resistance :
- 800mOhm
- Element Configuration :
- Single
- Packaging :
- Tube
- Published :
- 2016
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Weight :
- 6.000006g
- FET Type :
- P-Channel
- Min Operating Temperature :
- -55°C
- Continuous Drain Current (ID) :
- 4.3A
- Height :
- 9.8mm
- Number of Channels :
- 1
- Input Capacitance :
- 700pF
- Fall Time (Typ) :
- 24 ns
- Vgs (Max) :
- ±20V
- Current - Continuous Drain (Id) @ 25°C :
- 4.3A Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Voltage (Vdss) :
- 200V
- Rise Time :
- 27ns
- Length :
- 10.6mm
- Gate to Source Voltage (Vgs) :
- 20V
- Supplier Device Package :
- TO-220-3
- Number of Pins :
- 3
- Package / Case :
- TO-220-3 Full Pack, Isolated Tab
- Datasheets
- IRFI9630G

P-Channel Tube 800mOhm @ 2.6A, 10V ±20V 700pF @ 25V 29nC @ 10V 200V TO-220-3 Full Pack, Isolated Tab
IRFI9630G Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 700pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 4.3A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is -200V, and this device has a drainage-to-source breakdown voltage of -200VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 28 ns.This device has a drain-to-source resistance of 800mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 12 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 200V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IRFI9630G Features
a continuous drain current (ID) of 4.3A
a drain-to-source breakdown voltage of -200V voltage
the turn-off delay time is 28 ns
single MOSFETs transistor is 800mOhm
a 200V drain to source voltage (Vdss)
IRFI9630G Applications
There are a lot of Vishay Siliconix
IRFI9630G applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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