IRFI9620GPBF
- Mfr.Part #
- IRFI9620GPBF
- Manufacturer
- Vishay
- Package / Case
- TO-220-3 Full Pack, Isolated Tab
- Datasheet
- Download
- Description
- MOSFET P-CH 200V 3A TO220-3
- Stock
- 2,008
- In Stock :
- 2,008
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Through Hole
- Supplier Device Package :
- TO-220-3
- Gate Charge (Qg) (Max) @ Vgs :
- 15nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 340pF @ 15V
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 8 Weeks
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Power Dissipation :
- 30W
- Drain to Source Breakdown Voltage :
- -200V
- Mount :
- Through Hole
- Input Capacitance :
- 340pF
- Number of Elements :
- 1
- Rds On (Max) @ Id, Vgs :
- 1.5Ohm @ 1.8A, 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Min Operating Temperature :
- -55°C
- Length :
- 10.63mm
- Number of Pins :
- 3
- Rise Time :
- 27ns
- Packaging :
- Tube
- Published :
- 2014
- Package / Case :
- TO-220-3 Full Pack, Isolated Tab
- Radiation Hardening :
- No
- Operating Temperature :
- -55°C~150°C TJ
- Vgs (Max) :
- ±20V
- Current - Continuous Drain (Id) @ 25°C :
- 3A Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- P-Channel
- Max Operating Temperature :
- 150°C
- Element Configuration :
- Single
- Turn On Delay Time :
- 8.8 ns
- Power Dissipation-Max :
- 30W Tc
- Weight :
- 6.000006g
- Rds On Max :
- 1.5 Ω
- Gate to Source Voltage (Vgs) :
- 20V
- Turn-Off Delay Time :
- 7.3 ns
- Number of Channels :
- 1
- Height :
- 9.8mm
- Continuous Drain Current (ID) :
- 3A
- Width :
- 4.83mm
- Fall Time (Typ) :
- 19 ns
- Drain to Source Resistance :
- 1.5Ohm
- Drain to Source Voltage (Vdss) :
- 200V
- Datasheets
- IRFI9620GPBF

P-Channel Tube 1.5Ohm @ 1.8A, 10V ±20V 340pF @ 15V 15nC @ 10V 200V TO-220-3 Full Pack, Isolated Tab
IRFI9620GPBF Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 340pF @ 15V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has -200V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals -200V.As a result of its turn-off delay time, which is 7.3 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 1.5Ohm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 8.8 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 200V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IRFI9620GPBF Features
a continuous drain current (ID) of 3A
a drain-to-source breakdown voltage of -200V voltage
the turn-off delay time is 7.3 ns
single MOSFETs transistor is 1.5Ohm
a 200V drain to source voltage (Vdss)
IRFI9620GPBF Applications
There are a lot of Vishay Siliconix
IRFI9620GPBF applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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