IRFI9610G
- Mfr.Part #
- IRFI9610G
- Manufacturer
- Vishay
- Package / Case
- TO-220-3 Full Pack, Isolated Tab
- Datasheet
- Download
- Description
- MOSFET P-CH 200V 2A TO220-3
- Stock
- 3,343
- In Stock :
- 3,343
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Published :
- 2016
- Mounting Type :
- Through Hole
- Number of Channels :
- 1
- Width :
- 4.83mm
- Gate to Source Voltage (Vgs) :
- 20V
- Vgs (Max) :
- ±20V
- Drain to Source Resistance :
- 3Ohm
- Turn On Delay Time :
- 12 ns
- RoHS Status :
- Non-RoHS Compliant
- Turn-Off Delay Time :
- 19 ns
- Supplier Device Package :
- TO-220-3
- Operating Temperature :
- -55°C~150°C TJ
- Rise Time :
- 17ns
- Packaging :
- Tube
- Fall Time (Typ) :
- 15 ns
- Current - Continuous Drain (Id) @ 25°C :
- 2A Tc
- Element Configuration :
- Single
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Height :
- 9.8mm
- Number of Pins :
- 3
- Mount :
- Through Hole
- FET Type :
- P-Channel
- Input Capacitance :
- 180pF
- Package / Case :
- TO-220-3 Full Pack, Isolated Tab
- Min Operating Temperature :
- -55°C
- Drain to Source Voltage (Vdss) :
- 200V
- Gate Charge (Qg) (Max) @ Vgs :
- 13nC @ 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Length :
- 10.63mm
- Radiation Hardening :
- No
- Power Dissipation-Max :
- 27W Tc
- Continuous Drain Current (ID) :
- 2A
- Rds On Max :
- 3 Ω
- Max Operating Temperature :
- 150°C
- Input Capacitance (Ciss) (Max) @ Vds :
- 180pF @ 25V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Weight :
- 6.000006g
- Rds On (Max) @ Id, Vgs :
- 3Ohm @ 1.2A, 10V
- Datasheets
- IRFI9610G

P-Channel Tube 3Ohm @ 1.2A, 10V ±20V 180pF @ 25V 13nC @ 10V 200V TO-220-3 Full Pack, Isolated Tab
IRFI9610G Overview
A device's maximal input capacitance is 180pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 2A, which represents the maximum continuous current it can conduct.Its turn-off delay time is 19 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 3Ohm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 12 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 200V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IRFI9610G Features
a continuous drain current (ID) of 2A
the turn-off delay time is 19 ns
single MOSFETs transistor is 3Ohm
a 200V drain to source voltage (Vdss)
IRFI9610G Applications
There are a lot of Vishay Siliconix
IRFI9610G applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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