IRFI9530G
- Mfr.Part #
- IRFI9530G
- Manufacturer
- Vishay
- Package / Case
- TO-220-3 Full Pack, Isolated Tab
- Datasheet
- Download
- Description
- MOSFET P-CH 100V 7.7A TO220-3
- Stock
- 4,191
- In Stock :
- 4,191
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Channels :
- 1
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Rds On (Max) @ Id, Vgs :
- 300mOhm @ 4.6A, 10V
- Input Capacitance :
- 860pF
- Continuous Drain Current (ID) :
- 7.7A
- Turn-Off Delay Time :
- 31 ns
- Drain to Source Breakdown Voltage :
- -100V
- Drain to Source Resistance :
- 300mOhm
- Gate to Source Voltage (Vgs) :
- 20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Supplier Device Package :
- TO-220-3
- Package / Case :
- TO-220-3 Full Pack, Isolated Tab
- Power Dissipation-Max :
- 42W Tc
- Number of Pins :
- 3
- FET Type :
- P-Channel
- Mount :
- Through Hole
- Weight :
- 6.000006g
- Current - Continuous Drain (Id) @ 25°C :
- 7.7A Tc
- Height :
- 9.8mm
- Radiation Hardening :
- No
- Rds On Max :
- 300 mΩ
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain to Source Voltage (Vdss) :
- 100V
- RoHS Status :
- Non-RoHS Compliant
- Element Configuration :
- Single
- Rise Time :
- 52ns
- Fall Time (Typ) :
- 39 ns
- Vgs (Max) :
- ±20V
- Turn On Delay Time :
- 12 ns
- Min Operating Temperature :
- -55°C
- Input Capacitance (Ciss) (Max) @ Vds :
- 860pF @ 25V
- Operating Temperature :
- -55°C~175°C TJ
- Published :
- 2016
- Max Operating Temperature :
- 175°C
- Power Dissipation :
- 42W
- Width :
- 4.83mm
- Length :
- 10.63mm
- Packaging :
- Tube
- Gate Charge (Qg) (Max) @ Vgs :
- 38nC @ 10V
- Number of Elements :
- 1
- Datasheets
- IRFI9530G

P-Channel Tube 300mOhm @ 4.6A, 10V ±20V 860pF @ 25V 38nC @ 10V 100V TO-220-3 Full Pack, Isolated Tab
IRFI9530G Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 860pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 7.7A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is -100V, and this device has a drainage-to-source breakdown voltage of -100VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 31 ns.This device has a drain-to-source resistance of 300mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 12 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 100V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IRFI9530G Features
a continuous drain current (ID) of 7.7A
a drain-to-source breakdown voltage of -100V voltage
the turn-off delay time is 31 ns
single MOSFETs transistor is 300mOhm
a 100V drain to source voltage (Vdss)
IRFI9530G Applications
There are a lot of Vishay Siliconix
IRFI9530G applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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