IRFI9520G
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- Mfr.Part #
- IRFI9520G
- Manufacturer
- Vishay
- Package / Case
- TO-220-3 Full Pack, Isolated Tab
- Datasheet
- Download
- Description
- MOSFET P-CH 100V 5.2A TO220-3
- Stock
- 8,074
- In Stock ：
- 8,074
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Height :
- 9.8mm
- Fall Time (Typ) :
- 25 ns
- RoHS Status :
- Non-RoHS Compliant
- Drain to Source Voltage (Vdss) :
- 100V
- Number of Channels :
- 1
- Element Configuration :
- Single
- Current Rating :
- -5.2A
- Mounting Type :
- Through Hole
- Turn-Off Delay Time :
- 21 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Input Capacitance :
- 390pF
- Vgs (Max) :
- ±20V
- Power Dissipation-Max :
- 37W Tc
- Width :
- 4.83mm
- Drain to Source Breakdown Voltage :
- -100V
- Supplier Device Package :
- TO-220-3
- Rise Time :
- 29ns
- Drain to Source Resistance :
- 600mOhm
- FET Type :
- P-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 18nC @ 10V
- Continuous Drain Current (ID) :
- 5.2A
- Rds On Max :
- 600 mΩ
- Mount :
- Through Hole
- Operating Temperature :
- -55°C~175°C TJ
- Min Operating Temperature :
- -55°C
- Turn On Delay Time :
- 9.6 ns
- Number of Pins :
- 3
- Published :
- 2017
- Gate to Source Voltage (Vgs) :
- 20V
- Packaging :
- Tube
- Max Operating Temperature :
- 175°C
- Weight :
- 6.000006g
- Lead Free :
- Contains Lead
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Rated DC :
- -100V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Input Capacitance (Ciss) (Max) @ Vds :
- 390pF @ 25V
- Radiation Hardening :
- No
- Length :
- 10.63mm
- Package / Case :
- TO-220-3 Full Pack, Isolated Tab
- Rds On (Max) @ Id, Vgs :
- 600mOhm @ 3.1A, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 5.2A Tc
- Datasheets
- IRFI9520G
P-Channel Tube 600mOhm @ 3.1A, 10V ±20V 390pF @ 25V 18nC @ 10V 100V TO-220-3 Full Pack, Isolated Tab
IRFI9520G Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 390pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 5.2A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is -100V, and this device has a drainage-to-source breakdown voltage of -100VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 21 ns.This device has a drain-to-source resistance of 600mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 9.6 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 100V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IRFI9520G Features
a continuous drain current (ID) of 5.2A
a drain-to-source breakdown voltage of -100V voltage
the turn-off delay time is 21 ns
single MOSFETs transistor is 600mOhm
a 100V drain to source voltage (Vdss)
IRFI9520G Applications
There are a lot of Vishay Siliconix
IRFI9520G applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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