IRFI840G
- Mfr.Part #
- IRFI840G
- Manufacturer
- Vishay
- Package / Case
- TO-220-3 Full Pack, Isolated Tab
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 4.6A TO220-3
- Stock
- 22,215
- In Stock :
- 22,215
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On Max :
- 850 mΩ
- Input Capacitance (Ciss) (Max) @ Vds :
- 1300pF @ 25V
- Current - Continuous Drain (Id) @ 25°C :
- 4.6A Tc
- Turn-Off Delay Time :
- 55 ns
- Drain to Source Resistance :
- 850mOhm
- Min Operating Temperature :
- -55°C
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Width :
- 4.83mm
- Fall Time (Typ) :
- 21 ns
- Operating Temperature :
- -55°C~150°C TJ
- Drain to Source Breakdown Voltage :
- 500V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±20V
- Input Capacitance :
- 1.3nF
- Rise Time :
- 22ns
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Rds On (Max) @ Id, Vgs :
- 850mOhm @ 2.8A, 10V
- Power Dissipation :
- 40W
- Max Operating Temperature :
- 150°C
- Package / Case :
- TO-220-3 Full Pack, Isolated Tab
- Element Configuration :
- Single
- Mounting Type :
- Through Hole
- Number of Pins :
- 3
- Number of Channels :
- 1
- Power Dissipation-Max :
- 40W Tc
- Continuous Drain Current (ID) :
- 4.6A
- Drain to Source Voltage (Vdss) :
- 500V
- Gate Charge (Qg) (Max) @ Vgs :
- 67nC @ 10V
- Mount :
- Through Hole
- Number of Elements :
- 1
- RoHS Status :
- Non-RoHS Compliant
- Gate to Source Voltage (Vgs) :
- 20V
- Length :
- 10.63mm
- Published :
- 2016
- Turn On Delay Time :
- 14 ns
- Supplier Device Package :
- TO-220-3
- Packaging :
- Tube
- Radiation Hardening :
- No
- Weight :
- 6.000006g
- Height :
- 9.8mm
- Datasheets
- IRFI840G

N-Channel Tube 850mOhm @ 2.8A, 10V ±20V 1300pF @ 25V 67nC @ 10V 500V TO-220-3 Full Pack, Isolated Tab
IRFI840G Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1300pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 4.6A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 500V, and this device has a drainage-to-source breakdown voltage of 500VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 55 ns.This device has a drain-to-source resistance of 850mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 14 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 500V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IRFI840G Features
a continuous drain current (ID) of 4.6A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 55 ns
single MOSFETs transistor is 850mOhm
a 500V drain to source voltage (Vdss)
IRFI840G Applications
There are a lot of Vishay Siliconix
IRFI840G applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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