IRFI830GPBF
- Mfr.Part #
- IRFI830GPBF
- Manufacturer
- Vishay
- Package / Case
- TO-220-3 Full Pack, Isolated Tab
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 3.1A TO220-3
- Stock
- 9,359
- In Stock :
- 9,359
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Min Operating Temperature :
- -55°C
- Mount :
- Through Hole
- Fall Time (Typ) :
- 16 ns
- Current - Continuous Drain (Id) @ 25°C :
- 3.1A Tc
- FET Type :
- N-Channel
- Element Configuration :
- Single
- Height :
- 9.8mm
- Threshold Voltage :
- 4V
- Drain to Source Voltage (Vdss) :
- 500V
- Gate to Source Voltage (Vgs) :
- 20V
- Turn On Delay Time :
- 8.2 ns
- Number of Elements :
- 1
- Rds On (Max) @ Id, Vgs :
- 1.5Ohm @ 1.9A, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 610pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Length :
- 10.63mm
- Input Capacitance :
- 610pF
- Rise Time :
- 16ns
- Package / Case :
- TO-220-3 Full Pack, Isolated Tab
- Drain to Source Resistance :
- 1.5Ohm
- Published :
- 1997
- Mounting Type :
- Through Hole
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Packaging :
- Tube
- Power Dissipation-Max :
- 35W Tc
- Turn-Off Delay Time :
- 42 ns
- Radiation Hardening :
- No
- REACH SVHC :
- Unknown
- Operating Temperature :
- -55°C~150°C TJ
- Vgs (Max) :
- ±20V
- RoHS Status :
- ROHS3 Compliant
- Width :
- 4.83mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 11 Weeks
- Max Operating Temperature :
- 150°C
- Number of Pins :
- 3
- Number of Channels :
- 1
- Continuous Drain Current (ID) :
- 3.1A
- Weight :
- 6.000006g
- Rds On Max :
- 1.5 Ω
- Power Dissipation :
- 35W
- Supplier Device Package :
- TO-220-3
- Gate Charge (Qg) (Max) @ Vgs :
- 38nC @ 10V
- Isolation Voltage :
- 2.5kV
- Datasheets
- IRFI830GPBF

N-Channel Tube 1.5Ohm @ 1.9A, 10V ±20V 610pF @ 25V 38nC @ 10V 500V TO-220-3 Full Pack, Isolated Tab
IRFI830GPBF Overview
A device's maximal input capacitance is 610pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 3.1A, which represents the maximum continuous current it can conduct.Its turn-off delay time is 42 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 1.5Ohm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 8.2 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 4V threshold voltage.This transistor requires a 500V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IRFI830GPBF Features
a continuous drain current (ID) of 3.1A
the turn-off delay time is 42 ns
single MOSFETs transistor is 1.5Ohm
a threshold voltage of 4V
a 500V drain to source voltage (Vdss)
IRFI830GPBF Applications
There are a lot of Vishay Siliconix
IRFI830GPBF applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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