IRFI830G
- Mfr.Part #
- IRFI830G
- Manufacturer
- Vishay
- Package / Case
- TO-220-3 Full Pack, Isolated Tab
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 3.1A TO220-3
- Stock
- 46,695
- In Stock :
- 46,695
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- N-Channel
- Height :
- 9.8mm
- Max Operating Temperature :
- 150°C
- Number of Elements :
- 1
- Rise Time :
- 16ns
- Supplier Device Package :
- TO-220-3
- Factory Lead Time :
- 21 Weeks
- Number of Pins :
- 3
- Continuous Drain Current (ID) :
- 3.1A
- Drain to Source Voltage (Vdss) :
- 500V
- Radiation Hardening :
- No
- Turn On Delay Time :
- 8.2 ns
- Published :
- 2016
- Element Configuration :
- Single
- Power Dissipation :
- 35W
- Input Capacitance :
- 610pF
- Rds On (Max) @ Id, Vgs :
- 1.5Ohm @ 1.9A, 10V
- Power Dissipation-Max :
- 35W Tc
- Drain to Source Resistance :
- 1.5Ohm
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Length :
- 10.63mm
- Fall Time (Typ) :
- 16 ns
- Turn-Off Delay Time :
- 42 ns
- RoHS Status :
- Non-RoHS Compliant
- Vgs (Max) :
- ±20V
- Mount :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- TO-220-3 Full Pack, Isolated Tab
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Channels :
- 1
- Min Operating Temperature :
- -55°C
- Rds On Max :
- 1.5 Ω
- Gate Charge (Qg) (Max) @ Vgs :
- 38nC @ 10V
- Width :
- 4.83mm
- Current - Continuous Drain (Id) @ 25°C :
- 3.1A Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 610pF @ 25V
- Mounting Type :
- Through Hole
- Gate to Source Voltage (Vgs) :
- 20V
- Weight :
- 6.000006g
- Packaging :
- Tube
- Datasheets
- IRFI830G

N-Channel Tube 1.5Ohm @ 1.9A, 10V ±20V 610pF @ 25V 38nC @ 10V 500V TO-220-3 Full Pack, Isolated Tab
IRFI830G Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 610pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 3.1A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 42 ns.This device has a drain-to-source resistance of 1.5Ohm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 8.2 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 500V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IRFI830G Features
a continuous drain current (ID) of 3.1A
the turn-off delay time is 42 ns
single MOSFETs transistor is 1.5Ohm
a 500V drain to source voltage (Vdss)
IRFI830G Applications
There are a lot of Vishay Siliconix
IRFI830G applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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