IRFI820G

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Mfr.Part #
IRFI820G
Manufacturer
Vishay
Package / Case
TO-220-3 Full Pack, Isolated Tab
Datasheet
Download
Description
MOSFET N-CH 500V 2.1A TO220-3
Stock
5,078
In Stock :
5,078

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
FET Type :
N-Channel
Min Operating Temperature :
-55°C
Factory Lead Time :
15 Weeks
Fall Time (Typ) :
16 ns
Package / Case :
TO-220-3 Full Pack, Isolated Tab
Operating Temperature :
-55°C~150°C TJ
Number of Pins :
3
Drive Voltage (Max Rds On,Min Rds On) :
10V
RoHS Status :
Non-RoHS Compliant
Element Configuration :
Single
Power Dissipation :
30W
Rds On Max :
3 Ω
Supplier Device Package :
TO-220-3
Drain to Source Voltage (Vdss) :
500V
Published :
2017
Power Dissipation-Max :
30W Tc
Rds On (Max) @ Id, Vgs :
3Ohm @ 1.3A, 10V
Length :
10.63mm
Turn On Delay Time :
8 ns
Gate Charge (Qg) (Max) @ Vgs :
24nC @ 10V
Radiation Hardening :
No
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Rise Time :
8.6ns
Input Capacitance (Ciss) (Max) @ Vds :
360pF @ 25V
Number of Elements :
1
Input Capacitance :
360pF
Mount :
Through Hole
Width :
4.83mm
Weight :
6.000006g
Drain to Source Resistance :
3Ohm
Current - Continuous Drain (Id) @ 25°C :
2.1A Tc
Height :
9.8mm
Gate to Source Voltage (Vgs) :
20V
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
4V @ 250µA
Continuous Drain Current (ID) :
2.1A
Turn-Off Delay Time :
33 ns
Mounting Type :
Through Hole
Number of Channels :
1
Packaging :
Tube
Max Operating Temperature :
150°C
Datasheets
IRFI820G
Introducing Transistors - FETs, MOSFETs - Single Vishay IRFI820G from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3 Full Pack, Isolated Tab, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Mounting Type:Through Hole, Number of Channels:1, IRFI820G pinout, IRFI820G datasheet PDF, IRFI820G amp .Beyond Transistors - FETs, MOSFETs - Single Vishay IRFI820G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay IRFI820G


N-Channel Tube 3Ohm @ 1.3A, 10V ±20V 360pF @ 25V 24nC @ 10V 500V TO-220-3 Full Pack, Isolated Tab

IRFI820G Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 360pF @ 25V.This device conducts a continuous drain current (ID) of 2.1A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 33 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 3Ohm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 8 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 500V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IRFI820G Features


a continuous drain current (ID) of 2.1A
the turn-off delay time is 33 ns
single MOSFETs transistor is 3Ohm
a 500V drain to source voltage (Vdss)


IRFI820G Applications


There are a lot of Vishay Siliconix
IRFI820G applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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