IRFI744GPBF
- Mfr.Part #
- IRFI744GPBF
- Manufacturer
- Vishay
- Package / Case
- TO-220-3 Full Pack, Isolated Tab
- Datasheet
- Download
- Description
- MOSFET N-CH 450V 4.9A TO220-3
- Stock
- 17,014
- In Stock :
- 17,014
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Through Hole
- Vgs (Max) :
- ±20V
- REACH SVHC :
- Unknown
- Max Operating Temperature :
- 150°C
- Number of Channels :
- 1
- RoHS Status :
- ROHS3 Compliant
- Supplier Device Package :
- TO-220-3
- Power Dissipation-Max :
- 40W Tc
- Turn-Off Delay Time :
- 58 ns
- Continuous Drain Current (ID) :
- 4.9A
- Length :
- 10.63mm
- Fall Time (Typ) :
- 27 ns
- Element Configuration :
- Single
- Turn On Delay Time :
- 8.7 ns
- Rds On Max :
- 630 mΩ
- Drain to Source Voltage (Vdss) :
- 450V
- Min Operating Temperature :
- -55°C
- Published :
- 1997
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tube
- Input Capacitance (Ciss) (Max) @ Vds :
- 1400pF @ 25V
- Operating Temperature :
- -55°C~150°C TJ
- Weight :
- 6.000006g
- Drain to Source Resistance :
- 630mOhm
- FET Type :
- N-Channel
- Input Capacitance :
- 1.4nF
- Rise Time :
- 28ns
- Number of Pins :
- 3
- Gate to Source Voltage (Vgs) :
- 20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rds On (Max) @ Id, Vgs :
- 630mOhm @ 2.9A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 80nC @ 10V
- Threshold Voltage :
- 4V
- Height :
- 9.8mm
- Mount :
- Through Hole
- Package / Case :
- TO-220-3 Full Pack, Isolated Tab
- Current - Continuous Drain (Id) @ 25°C :
- 4.9A Tc
- Width :
- 4.83mm
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Datasheets
- IRFI744GPBF

N-Channel Tube 630mOhm @ 2.9A, 10V ±20V 1400pF @ 25V 80nC @ 10V 450V TO-220-3 Full Pack, Isolated Tab
IRFI744GPBF Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1400pF @ 25V.This device conducts a continuous drain current (ID) of 4.9A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 58 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 630mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 8.7 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 4V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 450V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IRFI744GPBF Features
a continuous drain current (ID) of 4.9A
the turn-off delay time is 58 ns
single MOSFETs transistor is 630mOhm
a threshold voltage of 4V
a 450V drain to source voltage (Vdss)
IRFI744GPBF Applications
There are a lot of Vishay Siliconix
IRFI744GPBF applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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