IRFI744G
- Mfr.Part #
- IRFI744G
- Manufacturer
- Vishay
- Package / Case
- TO-220-3 Full Pack, Isolated Tab
- Datasheet
- Download
- Description
- MOSFET N-CH 450V 4.9A TO220-3
- Stock
- 2,393
- In Stock :
- 2,393
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current Rating :
- 4.9A
- Supplier Device Package :
- TO-220-3
- Package / Case :
- TO-220-3 Full Pack, Isolated Tab
- Mounting Type :
- Through Hole
- Element Configuration :
- Single
- Lead Free :
- Contains Lead
- Drain to Source Resistance :
- 630mOhm
- Gate to Source Voltage (Vgs) :
- 20V
- Max Operating Temperature :
- 150°C
- Published :
- 2009
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Weight :
- 6.000006g
- Width :
- 4.83mm
- Min Operating Temperature :
- -55°C
- FET Type :
- N-Channel
- Height :
- 9.8mm
- Number of Pins :
- 3
- Vgs (Max) :
- ±20V
- Voltage - Rated DC :
- 450V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Breakdown Voltage :
- 450V
- Continuous Drain Current (ID) :
- 4.9A
- Packaging :
- Tube
- Rds On (Max) @ Id, Vgs :
- 630mOhm @ 2.9A, 10V
- Input Capacitance :
- 1.4nF
- Fall Time (Typ) :
- 27 ns
- Number of Channels :
- 1
- Turn-Off Delay Time :
- 58 ns
- RoHS Status :
- Non-RoHS Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 1400pF @ 25V
- Rds On Max :
- 630 mΩ
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation-Max :
- 40W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 80nC @ 10V
- Length :
- 10.63mm
- Drain to Source Voltage (Vdss) :
- 450V
- Mount :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 4.9A Tc
- Operating Temperature :
- -55°C~150°C TJ
- Rise Time :
- 28ns
- Turn On Delay Time :
- 8.7 ns
- Datasheets
- IRFI744G

N-Channel Tube 630mOhm @ 2.9A, 10V ±20V 1400pF @ 25V 80nC @ 10V 450V TO-220-3 Full Pack, Isolated Tab
IRFI744G Overview
A device's maximal input capacitance is 1400pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 4.9A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 450V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 58 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 630mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 8.7 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 450V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IRFI744G Features
a continuous drain current (ID) of 4.9A
a drain-to-source breakdown voltage of 450V voltage
the turn-off delay time is 58 ns
single MOSFETs transistor is 630mOhm
a 450V drain to source voltage (Vdss)
IRFI744G Applications
There are a lot of Vishay Siliconix
IRFI744G applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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