IRFI644G
- Mfr.Part #
- IRFI644G
- Manufacturer
- Vishay
- Package / Case
- TO-220-3 Full Pack, Isolated Tab
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 7.9A TO220-3
- Stock
- 6,874
- In Stock :
- 6,874
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- N-Channel
- Vgs (Max) :
- ±20V
- Current Rating :
- 7.9A
- Current - Continuous Drain (Id) @ 25°C :
- 7.9A Tc
- Weight :
- 6.000006g
- Voltage - Rated DC :
- 250V
- Min Operating Temperature :
- -55°C
- Turn-Off Delay Time :
- 53 ns
- Mounting Type :
- Through Hole
- Number of Pins :
- 3
- Drain to Source Breakdown Voltage :
- 250V
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Power Dissipation :
- 40W
- Width :
- 4.83mm
- Supplier Device Package :
- TO-220-3
- Package / Case :
- TO-220-3 Full Pack, Isolated Tab
- Rds On (Max) @ Id, Vgs :
- 280mOhm @ 4.7A, 10V
- Height :
- 9.8mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mount :
- Through Hole
- Gate Charge (Qg) (Max) @ Vgs :
- 68nC @ 10V
- Fall Time (Typ) :
- 24 ns
- Rds On Max :
- 280 mΩ
- Element Configuration :
- Single
- Continuous Drain Current (ID) :
- 7.9A
- Power Dissipation-Max :
- 40W Tc
- Max Operating Temperature :
- 150°C
- Gate to Source Voltage (Vgs) :
- 20V
- Rise Time :
- 24ns
- Published :
- 2016
- Radiation Hardening :
- No
- Input Capacitance :
- 1.3nF
- Lead Free :
- Contains Lead
- Length :
- 10.63mm
- RoHS Status :
- Non-RoHS Compliant
- Drain to Source Resistance :
- 280mOhm
- Drain to Source Voltage (Vdss) :
- 250V
- Packaging :
- Tube
- Turn On Delay Time :
- 11 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 1300pF @ 25V
- Number of Channels :
- 1
- Datasheets
- IRFI644G

N-Channel Tube 280mOhm @ 4.7A, 10V ±20V 1300pF @ 25V 68nC @ 10V 250V TO-220-3 Full Pack, Isolated Tab
IRFI644G Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1300pF @ 25V.This device has a continuous drain current (ID) of [7.9A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=250V, the drain-source breakdown voltage is 250V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 53 ns.MOSFETs have 280mOhm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 11 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to operate this transistor, a voltage of 250V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IRFI644G Features
a continuous drain current (ID) of 7.9A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 53 ns
single MOSFETs transistor is 280mOhm
a 250V drain to source voltage (Vdss)
IRFI644G Applications
There are a lot of Vishay Siliconix
IRFI644G applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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