IRFI640GPBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Rds On Max :

180 mΩ

Radiation Hardening :

No

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

200V

REACH SVHC :

Unknown

Drain to Source Resistance :

180mOhm

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 25V

Height :

9.8mm

Number of Channels :

1

Mounting Type :

Through Hole

Weight :

6.000006g

Isolation Voltage :

2.5kV

Number of Pins :

3

Package / Case :

TO-220-3 Full Pack, Isolated Tab

Fall Time (Typ) :

36 ns

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

9.8A Tc

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Resistance :

180mOhm

Power Dissipation-Max :

40W Tc

Power Dissipation :

40W

Mount :

Through Hole

Factory Lead Time :

8 Weeks

Rise Time :

51ns

Lead Free :

Lead Free

Length :

10.63mm

Max Operating Temperature :

150°C

Vgs(th) (Max) @ Id :

4V @ 250µA

Vgs (Max) :

±20V

Width :

4.83mm

Published :

2009

Input Capacitance :

1.3nF

Gate to Source Voltage (Vgs) :

20V

Drain to Source Voltage (Vdss) :

200V

Turn On Delay Time :

14 ns

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

180mOhm @ 5.9A, 10V

Threshold Voltage :

4V

Supplier Device Package :

TO-220-3

Turn-Off Delay Time :

45 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Min Operating Temperature :

-55°C

Continuous Drain Current (ID) :

9.8A

Gate Charge (Qg) (Max) @ Vgs :

70nC @ 10V