IRFI640G

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

1997

Drain to Source Breakdown Voltage :

200V

Continuous Drain Current (ID) :

9.8A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Through Hole

Number of Elements :

1

Packaging :

Tube

Width :

4.83mm

Supplier Device Package :

TO-220-3

Fall Time (Typ) :

36 ns

Rds On Max :

180 mΩ

Input Capacitance :

1.3nF

Weight :

6.000006g

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

40W

Height :

9.8mm

Drain to Source Voltage (Vdss) :

200V

Voltage - Rated DC :

200V

RoHS Status :

Non-RoHS Compliant

Power Dissipation-Max :

40W Tc

Mounting Type :

Through Hole

Current Rating :

9.8A

Gate Charge (Qg) (Max) @ Vgs :

70nC @ 10V

Turn On Delay Time :

14 ns

Rds On (Max) @ Id, Vgs :

180mOhm @ 5.9A, 10V

Lead Free :

Contains Lead

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 25V

Vgs (Max) :

±20V

Number of Pins :

3

FET Type :

N-Channel

Number of Channels :

1

Vgs(th) (Max) @ Id :

4V @ 250µA

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

9.8A Tc

Radiation Hardening :

No

Package / Case :

TO-220-3 Full Pack, Isolated Tab

Min Operating Temperature :

-55°C

Rise Time :

51ns

Element Configuration :

Single

Length :

10.63mm

Max Operating Temperature :

150°C

Drain to Source Resistance :

180mOhm

Turn-Off Delay Time :

45 ns