IRFI634GPBF
- Mfr.Part #
- IRFI634GPBF
- Manufacturer
- Vishay
- Package / Case
- TO-220-3 Full Pack, Isolated Tab
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 5.6A TO220-3
- Stock
- 8,706
- In Stock :
- 8,706
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- N-Channel
- Number of Elements :
- 1
- Continuous Drain Current (ID) :
- 5.6A
- Gate to Source Voltage (Vgs) :
- 20V
- Weight :
- 6.000006g
- Package / Case :
- TO-220-3 Full Pack, Isolated Tab
- Supplier Device Package :
- TO-220-3
- Rds On Max :
- 450 mΩ
- Threshold Voltage :
- 2V
- Packaging :
- Tube
- Power Dissipation-Max :
- 35W Tc
- Turn On Delay Time :
- 9.6 ns
- Drain to Source Breakdown Voltage :
- 250V
- Rds On (Max) @ Id, Vgs :
- 450mOhm @ 3.4A, 10V
- Input Capacitance :
- 770pF
- Gate Charge (Qg) (Max) @ Vgs :
- 41nC @ 10V
- Rise Time :
- 21ns
- Min Operating Temperature :
- -55°C
- Width :
- 4.83mm
- Power Dissipation :
- 35W
- Input Capacitance (Ciss) (Max) @ Vds :
- 770pF @ 25V
- Height :
- 9.8mm
- Radiation Hardening :
- No
- Drain to Source Resistance :
- 450mOhm
- Number of Pins :
- 3
- Element Configuration :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 5.6A Tc
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 8 Weeks
- Vgs (Max) :
- ±20V
- Fall Time (Typ) :
- 19 ns
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Through Hole
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- REACH SVHC :
- Unknown
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain to Source Voltage (Vdss) :
- 250V
- Mount :
- Through Hole
- Published :
- 2014
- Max Operating Temperature :
- 150°C
- Turn-Off Delay Time :
- 42 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 10.63mm
- Number of Channels :
- 1
- Datasheets
- IRFI634GPBF

N-Channel Tube 450mOhm @ 3.4A, 10V ±20V 770pF @ 25V 41nC @ 10V 250V TO-220-3 Full Pack, Isolated Tab
IRFI634GPBF Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 770pF @ 25V.This device conducts a continuous drain current (ID) of 5.6A, which is the maximum continuous current transistor can conduct.Using VGS=250V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 250V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 42 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 450mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 9.6 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 2V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 250V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IRFI634GPBF Features
a continuous drain current (ID) of 5.6A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 42 ns
single MOSFETs transistor is 450mOhm
a threshold voltage of 2V
a 250V drain to source voltage (Vdss)
IRFI634GPBF Applications
There are a lot of Vishay Siliconix
IRFI634GPBF applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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