IRFI630GPBF
- Mfr.Part #
- IRFI630GPBF
- Manufacturer
- Vishay
- Package / Case
- TO-220-3 Full Pack, Isolated Tab
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 5.9A TO220-3
- Stock
- 430
- In Stock :
- 430
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Min Operating Temperature :
- -55°C
- Input Capacitance (Ciss) (Max) @ Vds :
- 800pF @ 25V
- Element Configuration :
- Single
- Published :
- 2014
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Height :
- 9.8mm
- Weight :
- 6.000006g
- Turn-Off Delay Time :
- 39 ns
- Resistance :
- 400mOhm
- Fall Time (Typ) :
- 20 ns
- REACH SVHC :
- Unknown
- Recovery Time :
- 340 ns
- Number of Channels :
- 1
- Drain to Source Breakdown Voltage :
- 200V
- Rds On Max :
- 400 mΩ
- Length :
- 10.63mm
- Rise Time :
- 28ns
- Drain to Source Resistance :
- 400mOhm
- Threshold Voltage :
- 4V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain to Source Voltage (Vdss) :
- 200V
- Turn On Delay Time :
- 9.4 ns
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Current - Continuous Drain (Id) @ 25°C :
- 5.9A Tc
- Isolation Voltage :
- 2.5kV
- Continuous Drain Current (ID) :
- 5.9A
- Width :
- 4.83mm
- FET Type :
- N-Channel
- Factory Lead Time :
- 8 Weeks
- Supplier Device Package :
- TO-220-3
- Gate to Source Voltage (Vgs) :
- 20V
- Vgs (Max) :
- ±20V
- Number of Elements :
- 1
- Power Dissipation-Max :
- 35W Tc
- Input Capacitance :
- 800pF
- Rds On (Max) @ Id, Vgs :
- 400mOhm @ 3.5A, 10V
- Lead Free :
- Lead Free
- Package / Case :
- TO-220-3 Full Pack, Isolated Tab
- Radiation Hardening :
- No
- Packaging :
- Tube
- Power Dissipation :
- 35W
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Mount :
- Through Hole
- Operating Temperature :
- -55°C~150°C TJ
- Max Operating Temperature :
- 150°C
- Gate Charge (Qg) (Max) @ Vgs :
- 43nC @ 10V
- Datasheets
- IRFI630GPBF

N-Channel Tube 400mOhm @ 3.5A, 10V ±20V 800pF @ 25V 43nC @ 10V 200V TO-220-3 Full Pack, Isolated Tab
IRFI630GPBF Overview
A device's maximal input capacitance is 800pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 5.9A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 200V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 39 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 400mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 9.4 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 4V threshold voltage.This transistor requires a 200V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IRFI630GPBF Features
a continuous drain current (ID) of 5.9A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 39 ns
single MOSFETs transistor is 400mOhm
a threshold voltage of 4V
a 200V drain to source voltage (Vdss)
IRFI630GPBF Applications
There are a lot of Vishay Siliconix
IRFI630GPBF applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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