IRFI620GPBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

7.2 ns

Rds On (Max) @ Id, Vgs :

800m Ω @ 2.5A, 10V

Height :

9.8mm

Current Rating :

4.1A

Terminal Finish :

MATTE TIN

Isolation Voltage :

2.5kV

Number of Terminations :

3

Continuous Drain Current (ID) :

4.1A

Fall Time (Typ) :

13 ns

Power Dissipation :

30W

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Single

Dual Supply Voltage :

200V

Vgs(th) (Max) @ Id :

4V @ 250µA

Turn-Off Delay Time :

19 ns

Threshold Voltage :

4V

Packaging :

Tube

Factory Lead Time :

8 Weeks

Resistance :

800mOhm

Number of Elements :

1

Package / Case :

TO-220-3 Full Pack, Isolated Tab

Mounting Type :

Through Hole

Recovery Time :

300 ns

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

Pin Count :

3

Pbfree Code :

yes

Width :

4.83mm

JESD-609 Code :

e3

Voltage - Rated DC :

200V

Lead Free :

Lead Free

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20V

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Weight :

6.000006g

JEDEC-95 Code :

TO-220AB

Rise Time :

22ns

Drain to Source Breakdown Voltage :

200V

REACH SVHC :

No SVHC

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

4.1A Tc

Mount :

Through Hole

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

260pF @ 25V

Length :

10.63mm

Number of Pins :

3

Transistor Element Material :

SILICON

Published :

2004

Nominal Vgs :

4 V

Power Dissipation-Max :

30W Tc

Number of Channels :

1

Vgs (Max) :

±20V