IRFI620G
- Mfr.Part #
- IRFI620G
- Manufacturer
- Vishay
- Package / Case
- TO-220-3 Full Pack, Isolated Tab
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 4.1A TO220-3
- Stock
- 4,343
- In Stock :
- 4,343
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Pins :
- 3
- Fall Time (Typ) :
- 13 ns
- Rise Time :
- 22ns
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Input Capacitance :
- 260pF
- Drain to Source Voltage (Vdss) :
- 200V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mount :
- Through Hole
- Published :
- 2016
- RoHS Status :
- Non-RoHS Compliant
- Min Operating Temperature :
- -55°C
- Continuous Drain Current (ID) :
- 4.1A
- Current - Continuous Drain (Id) @ 25°C :
- 4.1A Tc
- Turn On Delay Time :
- 7.2 ns
- Turn-Off Delay Time :
- 19 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 260pF @ 25V
- Length :
- 10.63mm
- Power Dissipation-Max :
- 30W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 14nC @ 10V
- Drain to Source Resistance :
- 800mOhm
- Vgs (Max) :
- ±20V
- Element Configuration :
- Single
- Weight :
- 6.000006g
- Max Operating Temperature :
- 150°C
- Height :
- 9.8mm
- Number of Channels :
- 1
- Radiation Hardening :
- No
- Packaging :
- Tube
- Supplier Device Package :
- TO-220-3
- Width :
- 4.83mm
- Rds On Max :
- 800 mΩ
- Gate to Source Voltage (Vgs) :
- 20V
- Package / Case :
- TO-220-3 Full Pack, Isolated Tab
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 800mOhm @ 2.5A, 10V
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- IRFI620G

N-Channel Tube 800mOhm @ 2.5A, 10V ±20V 260pF @ 25V 14nC @ 10V 200V TO-220-3 Full Pack, Isolated Tab
IRFI620G Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 260pF @ 25V.This device has a continuous drain current (ID) of [4.1A], which is its maximum continuous current.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 19 ns.MOSFETs have 800mOhm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 7.2 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to operate this transistor, a voltage of 200V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IRFI620G Features
a continuous drain current (ID) of 4.1A
the turn-off delay time is 19 ns
single MOSFETs transistor is 800mOhm
a 200V drain to source voltage (Vdss)
IRFI620G Applications
There are a lot of Vishay Siliconix
IRFI620G applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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