IRFI614GPBF
- Mfr.Part #
- IRFI614GPBF
- Manufacturer
- Vishay
- Package / Case
- TO-220-3 Full Pack, Isolated Tab
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 2.1A TO220-3
- Stock
- 8,022
- In Stock :
- 8,022
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Length :
- 10.63mm
- Vgs (Max) :
- ±20V
- Fall Time (Typ) :
- 7 ns
- Published :
- 2016
- Mount :
- Through Hole
- Input Capacitance :
- 140pF
- Width :
- 4.83mm
- Element Configuration :
- Single
- Number of Pins :
- 3
- Lead Free :
- Contains Lead
- REACH SVHC :
- No SVHC
- RoHS Status :
- ROHS3 Compliant
- Resistance :
- 2kOhm
- Continuous Drain Current (ID) :
- 2.1A
- Threshold Voltage :
- 4V
- Max Operating Temperature :
- 150°C
- Current - Continuous Drain (Id) @ 25°C :
- 2.1A Tc
- Radiation Hardening :
- No
- Rds On (Max) @ Id, Vgs :
- 2Ohm @ 1.3A, 10V
- Rise Time :
- 7.6ns
- Number of Channels :
- 1
- Power Dissipation-Max :
- 23W Tc
- Package / Case :
- TO-220-3 Full Pack, Isolated Tab
- Weight :
- 6.000006g
- Min Operating Temperature :
- -55°C
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Height :
- 9.8mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 140pF @ 25V
- Rds On Max :
- 2 Ω
- Gate Charge (Qg) (Max) @ Vgs :
- 8.2nC @ 10V
- Packaging :
- Tube
- Supplier Device Package :
- TO-220-3
- Drain to Source Resistance :
- 2Ohm
- Drain to Source Voltage (Vdss) :
- 250V
- Gate to Source Voltage (Vgs) :
- 20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- N-Channel
- Nominal Vgs :
- 4 V
- Mounting Type :
- Through Hole
- Turn On Delay Time :
- 7 ns
- Factory Lead Time :
- 8 Weeks
- Dual Supply Voltage :
- 250V
- Operating Temperature :
- -55°C~150°C TJ
- Turn-Off Delay Time :
- 16 ns
- Datasheets
- IRFI614GPBF

N-Channel Tube 2Ohm @ 1.3A, 10V ±20V 140pF @ 25V 8.2nC @ 10V 250V TO-220-3 Full Pack, Isolated Tab
IRFI614GPBF Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 140pF @ 25V.This device conducts a continuous drain current (ID) of 2.1A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 16 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 2Ohm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 7 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 4V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 250V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IRFI614GPBF Features
a continuous drain current (ID) of 2.1A
the turn-off delay time is 16 ns
single MOSFETs transistor is 2Ohm
a threshold voltage of 4V
a 250V drain to source voltage (Vdss)
IRFI614GPBF Applications
There are a lot of Vishay Siliconix
IRFI614GPBF applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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