IRFI540NPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

94nC @ 10V

Length :

10.6172mm

Time@Peak Reflow Temperature-Max (s) :

40

REACH SVHC :

No SVHC

Termination :

Through Hole

Mounting Type :

Through Hole

Nominal Vgs :

4 V

Rds On (Max) @ Id, Vgs :

52m Ω @ 11A, 10V

Fall Time (Typ) :

33 ns

Lead Free :

Lead Free

Case Connection :

Isolated

Element Configuration :

Single

Vgs (Max) :

±20V

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

JEDEC-95 Code :

TO-220AB

Published :

1998

Turn On Delay Time :

8.2 ns

Operating Temperature :

-55°C~175°C TJ

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Turn-Off Delay Time :

44 ns

Dual Supply Voltage :

100V

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

54W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Threshold Voltage :

4V

Continuous Drain Current (ID) :

20A

Drain to Source Breakdown Voltage :

100V

Transistor Element Material :

SILICON

Width :

4.826mm

Number of Pins :

3

Packaging :

Tube

Rise Time :

39ns

Drain-source On Resistance-Max :

0.052Ohm

Power Dissipation :

42W

Isolation Voltage :

2.5kV

Current Rating :

20A

Factory Lead Time :

12 Weeks

Height :

9.8mm

Voltage - Rated DC :

100V

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

260

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

3

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

1400pF @ 25V

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Elements :

1

Series :

HEXFET®

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Mount :

Through Hole

Recovery Time :

250 ns

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Package / Case :

TO-220-3 Full Pack