IRFI530N

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

TO-220-3 Full Pack

Rds On (Max) @ Id, Vgs :

110m Ω @ 6.6A, 10V

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Mounting Type :

Through Hole

JEDEC-95 Code :

TO-220AB

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Additional Feature :

AVALANCHE RATED

DS Breakdown Voltage-Min :

100V

Drain-source On Resistance-Max :

0.11Ohm

Pulsed Drain Current-Max (IDM) :

60A

Drain to Source Voltage (Vdss) :

100V

Terminal Position :

Single

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

150 mJ

Drain Current-Max (Abs) (ID) :

12A

Vgs (Max) :

±20V

RoHS Status :

Non-RoHS Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

3

Power Dissipation-Max :

41W Tc

Published :

1998

Vgs(th) (Max) @ Id :

4V @ 250µA

Qualification Status :

Not Qualified

Case Connection :

Isolated

Gate Charge (Qg) (Max) @ Vgs :

44nC @ 10V

Packaging :

Tube

JESD-30 Code :

R-PSFM-T3

Operating Temperature :

-55°C~175°C TJ

Series :

HEXFET®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Surface Mount :

No

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

640pF @ 25V