IRFI520N

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~175°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

330pF @ 25V

Qualification Status :

Not Qualified

Rds On (Max) @ Id, Vgs :

200m Ω @ 4.3A, 10V

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

100V

Series :

HEXFET®

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

1998

FET Type :

N-Channel

Configuration :

Single

JEDEC-95 Code :

TO-220AB

Drain to Source Voltage (Vdss) :

100V

Surface Mount :

No

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Case Connection :

Isolated

Current - Continuous Drain (Id) @ 25°C :

7.6A Tc

Drain-source On Resistance-Max :

0.2Ohm

JESD-609 Code :

e3

Terminal Position :

Single

Number of Elements :

1

Vgs(th) (Max) @ Id :

4V @ 250µA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

RoHS Status :

Non-RoHS Compliant

Packaging :

Tube

Power Dissipation-Max :

30W Tc

JESD-30 Code :

R-PSFM-T3

Package / Case :

TO-220-3 Full Pack

Drain Current-Max (Abs) (ID) :

7.2A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED