IRFI520GPBF
- Mfr.Part #
- IRFI520GPBF
- Manufacturer
- Vishay
- Package / Case
- TO-220-3 Full Pack, Isolated Tab
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 7.2A TO220-3
- Stock
- 8,804
- In Stock :
- 8,804
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 37W Tc
- Operating Temperature :
- -55°C~175°C TJ
- Turn On Delay Time :
- 8.8 ns
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- Resistance :
- 270mOhm
- Gate Charge (Qg) (Max) @ Vgs :
- 16nC @ 10V
- Fall Time (Typ) :
- 20 ns
- Length :
- 10.63mm
- Number of Pins :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 7.2A Tc
- Weight :
- 6.000006g
- RoHS Status :
- ROHS3 Compliant
- Min Operating Temperature :
- -55°C
- Rise Time :
- 30ns
- Mount :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 360pF @ 25V
- Number of Channels :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Input Capacitance :
- 360pF
- Vgs (Max) :
- ±20V
- Width :
- 4.83mm
- Drain to Source Voltage (Vdss) :
- 100V
- Lead Free :
- Lead Free
- Published :
- 2014
- Radiation Hardening :
- No
- Continuous Drain Current (ID) :
- 7.2A
- Supplier Device Package :
- TO-220-3
- Packaging :
- Tube
- FET Type :
- N-Channel
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn-Off Delay Time :
- 19 ns
- Rds On Max :
- 270 mΩ
- Gate to Source Voltage (Vgs) :
- 20V
- Package / Case :
- TO-220-3 Full Pack, Isolated Tab
- Factory Lead Time :
- 8 Weeks
- Drain to Source Resistance :
- 270mOhm
- Rds On (Max) @ Id, Vgs :
- 270mOhm @ 4.3A, 10V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Power Dissipation :
- 37W
- Max Operating Temperature :
- 175°C
- Height :
- 9.8mm
- Datasheets
- IRFI520GPBF

N-Channel Tube 270mOhm @ 4.3A, 10V ±20V 360pF @ 25V 16nC @ 10V 100V TO-220-3 Full Pack, Isolated Tab
IRFI520GPBF Overview
The maximum input capacitance of this device is 360pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 7.2A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 19 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 270mOhm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 8.8 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 100V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IRFI520GPBF Features
a continuous drain current (ID) of 7.2A
the turn-off delay time is 19 ns
single MOSFETs transistor is 270mOhm
a 100V drain to source voltage (Vdss)
IRFI520GPBF Applications
There are a lot of Vishay Siliconix
IRFI520GPBF applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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