IRFI510GPBF
- Mfr.Part #
- IRFI510GPBF
- Manufacturer
- Vishay
- Package / Case
- TO-220-3 Full Pack, Isolated Tab
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 4.5A TO220-3
- Stock
- 995
- In Stock :
- 995
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Power Dissipation :
- 27W
- Vgs (Max) :
- ±20V
- Min Operating Temperature :
- -55°C
- Weight :
- 6.000006g
- Max Operating Temperature :
- 175°C
- Continuous Drain Current (ID) :
- 4.5A
- Packaging :
- Tube
- Power Dissipation-Max :
- 27W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 8.3nC @ 10V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- FET Type :
- N-Channel
- Operating Temperature :
- -55°C~175°C TJ
- Number of Channels :
- 1
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Pins :
- 3
- Drain to Source Voltage (Vdss) :
- 100V
- Mounting Type :
- Through Hole
- Drain to Source Resistance :
- 540mOhm
- Rise Time :
- 16ns
- Input Capacitance :
- 180pF
- Threshold Voltage :
- 4V
- Supplier Device Package :
- TO-220-3
- Element Configuration :
- Single
- Turn-Off Delay Time :
- 15 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 540mOhm @ 2.7A, 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rds On Max :
- 540 mΩ
- Current - Continuous Drain (Id) @ 25°C :
- 4.5A Tc
- Nominal Vgs :
- 4 V
- Published :
- 2017
- Package / Case :
- TO-220-3 Full Pack, Isolated Tab
- Radiation Hardening :
- No
- Input Capacitance (Ciss) (Max) @ Vds :
- 180pF @ 25V
- Height :
- 9.8mm
- Turn On Delay Time :
- 6.9 ns
- Fall Time (Typ) :
- 9.4 ns
- Factory Lead Time :
- 8 Weeks
- REACH SVHC :
- No SVHC
- Mount :
- Through Hole
- Length :
- 10.63mm
- Width :
- 4.83mm
- Datasheets
- IRFI510GPBF

N-Channel Tube 540mOhm @ 2.7A, 10V ±20V 180pF @ 25V 8.3nC @ 10V 100V TO-220-3 Full Pack, Isolated Tab
IRFI510GPBF Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 180pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 4.5A.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 15 ns.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 540mOhm exists between the drain and source.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 6.9 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.4V is the threshold voltage at which an electrical device activates any of its operations.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 100V.Using drive voltage (10V) reduces this device's overall power consumption.
IRFI510GPBF Features
a continuous drain current (ID) of 4.5A
the turn-off delay time is 15 ns
single MOSFETs transistor is 540mOhm
a threshold voltage of 4V
a 100V drain to source voltage (Vdss)
IRFI510GPBF Applications
There are a lot of Vishay Siliconix
IRFI510GPBF applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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