IRFI510G

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Mfr.Part #
IRFI510G
Manufacturer
Vishay
Package / Case
TO-220-3 Full Pack, Isolated Tab
Datasheet
Download
Description
MOSFET N-CH 100V 4.5A TO220-3
Stock
672
In Stock :
672

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Drain to Source Voltage (Vdss) :
100V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Drain to Source Resistance :
540mOhm
FET Type :
N-Channel
Mounting Type :
Through Hole
Length :
10.63mm
Operating Temperature :
-55°C~175°C TJ
Radiation Hardening :
No
Current - Continuous Drain (Id) @ 25°C :
4.5A Tc
Rds On Max :
540 mΩ
Input Capacitance :
180pF
Min Operating Temperature :
-55°C
Turn On Delay Time :
6.9 ns
Package / Case :
TO-220-3 Full Pack, Isolated Tab
Fall Time (Typ) :
9.4 ns
Number of Pins :
3
Max Operating Temperature :
175°C
Turn-Off Delay Time :
15 ns
Input Capacitance (Ciss) (Max) @ Vds :
180pF @ 25V
Width :
4.83mm
RoHS Status :
Non-RoHS Compliant
Mount :
Through Hole
Vgs (Max) :
±20V
Height :
9.8mm
Packaging :
Tube
Drain to Source Breakdown Voltage :
100V
Continuous Drain Current (ID) :
4.5A
Published :
2016
Power Dissipation-Max :
27W Tc
Vgs(th) (Max) @ Id :
4V @ 250µA
Element Configuration :
Single
Gate Charge (Qg) (Max) @ Vgs :
8.3nC @ 10V
Rds On (Max) @ Id, Vgs :
540mOhm @ 2.7A, 10V
Number of Channels :
1
Supplier Device Package :
TO-220-3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Weight :
6.000006g
Rise Time :
16ns
Gate to Source Voltage (Vgs) :
20V
Datasheets
IRFI510G
Introducing Transistors - FETs, MOSFETs - Single Vishay IRFI510G from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:-55°C~175°C TJ, Package / Case:TO-220-3 Full Pack, Isolated Tab, Number of Pins:3, Number of Channels:1, IRFI510G pinout, IRFI510G datasheet PDF, IRFI510G amp .Beyond Transistors - FETs, MOSFETs - Single Vishay IRFI510G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay IRFI510G


N-Channel Tube 540mOhm @ 2.7A, 10V ±20V 180pF @ 25V 8.3nC @ 10V 100V TO-220-3 Full Pack, Isolated Tab

IRFI510G Overview


A device's maximum input capacitance is 180pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 4.5A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=100V, and this device has a drain-to-source breakdown voltage of 100V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 15 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 540mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 6.9 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 100V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IRFI510G Features


a continuous drain current (ID) of 4.5A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 15 ns
single MOSFETs transistor is 540mOhm
a 100V drain to source voltage (Vdss)


IRFI510G Applications


There are a lot of Vishay Siliconix
IRFI510G applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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