IRFI4905

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

63W Tc

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

41A Tc

Terminal Position :

Single

Avalanche Energy Rating (Eas) :

930 mJ

JESD-609 Code :

e3

JEDEC-95 Code :

TO-220AB

FET Type :

P-Channel

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

260A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Case Connection :

Isolated

DS Breakdown Voltage-Min :

55V

Gate Charge (Qg) (Max) @ Vgs :

180nC @ 10V

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-30 Code :

R-PSFM-T3

Input Capacitance (Ciss) (Max) @ Vds :

3400pF @ 25V

Surface Mount :

No

Drain to Source Voltage (Vdss) :

55V

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-220-3 Full Pack

Qualification Status :

Not Qualified

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain Current-Max (Abs) (ID) :

41A

Rds On (Max) @ Id, Vgs :

20m Ω @ 22A, 10V

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Number of Terminations :

3

Published :

1997

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.02Ohm

RoHS Status :

Non-RoHS Compliant

Series :

HEXFET®

ECCN Code :

EAR99