IRFI4229PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

9.8mm

Turn On Delay Time :

18 ns

Peak Reflow Temperature (Cel) :

260

Turn-Off Delay Time :

32 ns

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Published :

2008

Factory Lead Time :

12 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-40°C~150°C TJ

Fall Time (Typ) :

13 ns

RoHS Status :

ROHS3 Compliant

Power Dissipation :

46W

Series :

HEXFET®

Radiation Hardening :

No

Drain-source On Resistance-Max :

0.046Ohm

Gate to Source Voltage (Vgs) :

30V

Terminal Finish :

MATTE TIN OVER NICKEL

Input Capacitance (Ciss) (Max) @ Vds :

4480pF @ 25V

Rds On (Max) @ Id, Vgs :

46m Ω @ 11A, 10V

JEDEC-95 Code :

TO-220AB

Rise Time :

17ns

Packaging :

Tube

FET Type :

N-Channel

Number of Pins :

3

Drain to Source Breakdown Voltage :

250V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

4.83mm

ECCN Code :

EAR99

Continuous Drain Current (ID) :

19A

Power Dissipation-Max :

46W Tc

Current - Continuous Drain (Id) @ 25°C :

19A Tc

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Vgs(th) (Max) @ Id :

5V @ 250μA

Pulsed Drain Current-Max (IDM) :

72A

Mount :

Through Hole

Length :

10.63mm

Case Connection :

Isolated

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Element Configuration :

Single

Package / Case :

TO-220-3

Number of Terminations :

3

Time@Peak Reflow Temperature-Max (s) :

40

Vgs (Max) :

±30V

Mounting Type :

Through Hole

Number of Elements :

1

Avalanche Energy Rating (Eas) :

110 mJ