IRFI4228PBF
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- Mfr.Part #
- IRFI4228PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 34A TO220AB FP
- Stock
- 5,105
- In Stock ：
- 5,105
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- TO-220-3 Full Pack
- Operating Mode :
- ENHANCEMENT MODE
- Height :
- 9.8mm
- Vgs (Max) :
- ±30V
- Number of Elements :
- 1
- Voltage - Rated DC :
- 150V
- Resistance :
- 16mOhm
- Radiation Hardening :
- No
- Gate to Source Voltage (Vgs) :
- 30V
- JEDEC-95 Code :
- TO-220AB
- Rds On (Max) @ Id, Vgs :
- 16m Ω @ 20A, 10V
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Transistor Application :
- SWITCHING
- Mount :
- Through Hole
- Drain to Source Breakdown Voltage :
- 150V
- Input Capacitance (Ciss) (Max) @ Vds :
- 4560pF @ 25V
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 10.6172mm
- Current - Continuous Drain (Id) @ 25°C :
- 34A Tc
- Current Rating :
- 34A
- Mounting Type :
- Through Hole
- Packaging :
- Tube
- Power Dissipation-Max :
- 46W Tc
- Operating Temperature :
- -40°C~150°C TJ
- Case Connection :
- DRAIN
- Lead Free :
- Lead Free
- Number of Pins :
- 3
- Number of Terminations :
- 3
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 110nC @ 10V
- Transistor Element Material :
- SILICON
- Continuous Drain Current (ID) :
- 34A
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 46W
- Series :
- HEXFET®
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Published :
- 2006
- Element Configuration :
- Single
- Width :
- 4.826mm
- Factory Lead Time :
- 15 Weeks
- Datasheets
- IRFI4228PBF
N-Channel Tube 16m Ω @ 20A, 10V ±30V 4560pF @ 25V 110nC @ 10V TO-220-3 Full Pack
IRFI4228PBF Overview
A device's maximum input capacitance is 4560pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 34A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=150V, and this device has a drain-to-source breakdown voltage of 150V voltage.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.This device uses no drive voltage (10V) to reduce its overall power consumption.
IRFI4228PBF Features
a continuous drain current (ID) of 34A
a drain-to-source breakdown voltage of 150V voltage
IRFI4228PBF Applications
There are a lot of Infineon Technologies
IRFI4228PBF applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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