IRFI4227PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Width :

4.826mm

Gate to Source Voltage (Vgs) :

30V

Height :

9.8044mm

Series :

HEXFET®

Turn-Off Delay Time :

11 ns

Pulsed Drain Current-Max (IDM) :

100A

Factory Lead Time :

12 Weeks

Vgs (Max) :

±30V

Threshold Voltage :

5V

FET Type :

N-Channel

Length :

10.6172mm

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

25m Ω @ 17A, 10V

Power Dissipation-Max :

46W Tc

Input Capacitance (Ciss) (Max) @ Vds :

4600pF @ 25V

Operating Temperature :

-40°C~150°C TJ

Continuous Drain Current (ID) :

26A

Drain to Source Breakdown Voltage :

200V

Current - Continuous Drain (Id) @ 25°C :

26A Tc

Package / Case :

TO-220-3 Full Pack

Vgs(th) (Max) @ Id :

5V @ 250μA

Mount :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

29 ns

Case Connection :

DRAIN

Number of Elements :

1

Power Dissipation :

46W

Operating Mode :

ENHANCEMENT MODE

Rise Time :

19ns

Number of Terminations :

3

Published :

2007

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Element Configuration :

Single

Drain-source On Resistance-Max :

0.025Ohm

Avalanche Energy Rating (Eas) :

54 mJ

Turn On Delay Time :

17 ns

JEDEC-95 Code :

TO-220AB

REACH SVHC :

No SVHC

Radiation Hardening :

No

Mounting Type :

Through Hole

Number of Pins :

3

ECCN Code :

EAR99