IRFAE42
- Mfr.Part #
- IRFAE42
- Manufacturer
- International Rectifier
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- N-CHANNEL HERMETIC MOS HEXFET
- Stock
- 42,738
- In Stock :
- 42,738
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Surface Mount :
- No
- Case Connection :
- DRAIN
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Operating Mode :
- ENHANCEMENT MODE
- Rds On (Max) @ Id, Vgs :
- -
- Package :
- Bulk
- Power Dissipation-Max (Abs) :
- 125 W
- Product Status :
- Active
- Pulsed Drain Current-Max (IDM) :
- 18 A
- JESD-609 Code :
- e0
- JEDEC-95 Code :
- TO-204AA
- Reach Compliance Code :
- Unknown
- Drain to Source Voltage (Vdss) :
- 800 V
- Current - Continuous Drain (Id) @ 25°C :
- 4.4A
- Vgs (Max) :
- -
- Configuration :
- Single
- Number of Terminals :
- 2
- FET Type :
- N-Channel
- Qualification Status :
- Not Qualified
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Manufacturer :
- International Rectifier
- JESD-30 Code :
- O-MBFM-P2
- Drain Current-Max (Abs) (ID) :
- 4.4 A
- Subcategory :
- FET General Purpose Power
- DS Breakdown Voltage-Min :
- 800 V
- Polarity/Channel Type :
- N-Channel
- Mounting Type :
- Through Hole
- Vgs(th) (Max) @ Id :
- -
- Series :
- -
- Power Dissipation (Max) :
- 125W
- FET Feature :
- -
- Drive Voltage (Max Rds On, Min Rds On) :
- -
- Terminal Form :
- PIN/PEG
- Package Shape :
- Round
- Supplier Device Package :
- TO-204AA (TO-3)
- Terminal Position :
- BOTTOM
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Package / Case :
- TO-204AA, TO-3
- Operating Temperature :
- -
- Drain-source On Resistance-Max :
- 2.4 Ω
- Datasheets
- IRFAE42

N-Channel - - 800 V TO-204AA, TO-3
IRFAE42 Overview
4.4 A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 18 A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 800 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 800 V.
IRFAE42 Features
based on its rated peak drain current 18 A.
a 800 V drain to source voltage (Vdss)
IRFAE42 Applications
There are a lot of International Rectifier
IRFAE42 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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