IRFAF50

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - RF

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Polarity/Channel Type :

N-Channel

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Elements :

1

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Temperature :

-55°C ~ 150°C (TJ)

Terminal Finish :

TIN LEAD

Package Shape :

Round

JEDEC-95 Code :

TO-204AA

Avalanche Energy Rating (Eas) :

870 mJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-609 Code :

e0

Supplier Device Package :

TO-204AA (TO-3)

Series :

HEXFET®

Input Capacitance (Ciss) (Max) @ Vds :

2700 pF @ 25 V

FET Feature :

-

FET Type :

N-Channel

Vgs (Max) :

±20V

Terminal Form :

PIN/PEG

Drain-source On Resistance-Max :

1.85 Ω

JESD-30 Code :

O-MBFM-P2

Number of Terminals :

2

Terminal Position :

BOTTOM

Technology :

MOSFET (Metal Oxide)

Mounting Type :

Through Hole

Package :

Bulk

Power Dissipation (Max) :

150W (Tc)

Qualification Status :

COMMERCIAL

Surface Mount :

No

Reach Compliance Code :

Unknown

Product Status :

Active

Gate Charge (Qg) (Max) @ Vgs :

180 nC @ 10 V

Pbfree Code :

No

Rds On (Max) @ Id, Vgs :

1.85Ohm @ 6.2A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

TO-204AA, TO-3

Pulsed Drain Current-Max (IDM) :

25 A

Drive Voltage (Max Rds On, Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

6.2A (Tc)

DS Breakdown Voltage-Min :

900 V

Manufacturer :

Rochester Electronics LLC

Pin Count :

2

Drain to Source Voltage (Vdss) :

900 V