IRFAF30

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - RF

Package :

Bulk

Rds On (Max) @ Id, Vgs :

4.6Ohm @ 2A, 10V

Technology :

MOSFET (Metal Oxide)

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

2A (Tc)

Mounting Type :

Through Hole

FET Feature :

-

Drain to Source Voltage (Vdss) :

900 V

Product Status :

Active

Operating Temperature :

-55°C ~ 150°C (TJ)

Input Capacitance (Ciss) (Max) @ Vds :

1000 pF @ 25 V

Vgs(th) (Max) @ Id :

4V @ 250µA

Supplier Device Package :

TO-204AA (TO-3)

Gate Charge (Qg) (Max) @ Vgs :

66 nC @ 10 V

Package / Case :

TO-204AA, TO-3

Vgs (Max) :

±20V

Power Dissipation (Max) :

75W (Tc)

Series :

HEXFET®

Drive Voltage (Max Rds On, Min Rds On) :

10V