IRF4905STRRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

P-Channel

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Factory Lead Time :

14 Weeks

Avalanche Energy Rating (Eas) :

140 mJ

Qualification Status :

Not Qualified

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Surface Mount :

yes

Drain Current-Max (Abs) (ID) :

42A

Current - Continuous Drain (Id) @ 25°C :

42A Tc

Number of Terminations :

2

Drain to Source Voltage (Vdss) :

55V

Mounting Type :

Surface Mount

Terminal Position :

Single

DS Breakdown Voltage-Min :

55V

Number of Elements :

1

Vgs (Max) :

±20V

Series :

HEXFET®

ECCN Code :

EAR99

Additional Feature :

HIGH RELIABILITY, AVALANCHE RATED

Peak Reflow Temperature (Cel) :

260

Packaging :

Tape and Reel (TR)

Drain-source On Resistance-Max :

0.02Ohm

Pulsed Drain Current-Max (IDM) :

280A

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

JESD-609 Code :

e3

Power Dissipation-Max :

170W Tc

Rds On (Max) @ Id, Vgs :

20m Ω @ 42A, 10V

Published :

1997

Gate Charge (Qg) (Max) @ Vgs :

180nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

30

Operating Temperature :

-55°C~175°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

3500pF @ 25V

JESD-30 Code :

R-PSSO-G2

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant