IRF4104PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

77 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

Resistance :

5.5mOhm

Factory Lead Time :

12 Weeks

Length :

10.668mm

Power Dissipation :

140W

Width :

4.826mm

Operating Temperature :

-55°C~175°C TJ

Operating Mode :

ENHANCEMENT MODE

Voltage - Rated DC :

40V

Series :

HEXFET®

Pulsed Drain Current-Max (IDM) :

470A

Packaging :

Tube

Element Configuration :

Single

Threshold Voltage :

4V

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Rise Time :

130ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Height :

9.017mm

Radiation Hardening :

No

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Published :

2003

Number of Elements :

1

Mounting Type :

Through Hole

Continuous Drain Current (ID) :

75A

REACH SVHC :

No SVHC

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

3000pF @ 25V

Transistor Application :

SWITCHING

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Turn-Off Delay Time :

38 ns

Recovery Time :

35 ns

Power Dissipation-Max :

140W Tc

Vgs (Max) :

±20V

Current Rating :

75A

ECCN Code :

EAR99

Avalanche Energy Rating (Eas) :

220 mJ

Mount :

Through Hole

Package / Case :

TO-220-3

Number of Terminations :

3

JEDEC-95 Code :

TO-220AB

Rds On (Max) @ Id, Vgs :

5.5m Ω @ 75A, 10V

Turn On Delay Time :

16 ns

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 10V

Drain to Source Breakdown Voltage :

40V