IRF4104SPBF

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Mfr.Part #
IRF4104SPBF
Manufacturer
Infineon Technologies
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 40V 75A D2PAK
Stock
24,540
In Stock :
24,540

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Transistor Application :
SWITCHING
Factory Lead Time :
15 Weeks
Packaging :
Tube
Number of Terminations :
2
Radiation Hardening :
No
Continuous Drain Current (ID) :
75A
Power Dissipation :
140W
Lead Free :
Lead Free
Operating Temperature :
-55°C~175°C TJ
Power Dissipation-Max :
140W Tc
FET Type :
N-Channel
Published :
2004
Threshold Voltage :
4V
Current Rating :
75A
JESD-609 Code :
e3
Number of Elements :
1
Time@Peak Reflow Temperature-Max (s) :
30
Transistor Element Material :
SILICON
Element Configuration :
Single
Recovery Time :
35 ns
Mount :
Surface Mount
Operating Mode :
ENHANCEMENT MODE
Number of Pins :
3
Drive Voltage (Max Rds On,Min Rds On) :
10V
REACH SVHC :
No SVHC
Mounting Type :
Surface Mount
Avalanche Energy Rating (Eas) :
220 mJ
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Height :
4.83mm
Series :
HEXFET®
Gate Charge (Qg) (Max) @ Vgs :
100nC @ 10V
Fall Time (Typ) :
77 ns
ECCN Code :
EAR99
Turn On Delay Time :
16 ns
Input Capacitance (Ciss) (Max) @ Vds :
3000pF @ 25V
Current - Continuous Drain (Id) @ 25°C :
75A Tc
Terminal Finish :
Matte Tin (Sn) - with Nickel (Ni) barrier
JESD-30 Code :
R-PSSO-G2
Drain to Source Breakdown Voltage :
40V
Additional Feature :
AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Peak Reflow Temperature (Cel) :
260
Terminal Form :
Gull wing
Turn-Off Delay Time :
38 ns
Voltage - Rated DC :
75V
Resistance :
5.5mOhm
Vgs (Max) :
±20V
Width :
9.65mm
Length :
10.67mm
Rds On (Max) @ Id, Vgs :
5.5m Ω @ 75A, 10V
RoHS Status :
ROHS3 Compliant
Pulsed Drain Current-Max (IDM) :
470A
Case Connection :
DRAIN
Vgs(th) (Max) @ Id :
4V @ 250µA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Gate to Source Voltage (Vgs) :
20V
Rise Time :
130ns
Datasheets
IRF4104SPBF
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IRF4104SPBF from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Operating Temperature:-55°C~175°C TJ, Number of Pins:3, Mounting Type:Surface Mount, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, IRF4104SPBF pinout, IRF4104SPBF datasheet PDF, IRF4104SPBF amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IRF4104SPBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRF4104SPBF


N-Channel Tube 5.5m Ω @ 75A, 10V ±20V 3000pF @ 25V 100nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRF4104SPBF Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 220 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 3000pF @ 25V.This device has a continuous drain current (ID) of [75A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=40V, the drain-source breakdown voltage is 40V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 38 ns.A maximum pulsed drain current of 470A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 16 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 4V.Its overall power consumption can be reduced by using drive voltage (10V).

IRF4104SPBF Features


the avalanche energy rating (Eas) is 220 mJ
a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 38 ns
based on its rated peak drain current 470A.
a threshold voltage of 4V


IRF4104SPBF Applications


There are a lot of Infineon Technologies
IRF4104SPBF applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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