IRF4905SPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

280A

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drive Voltage (Max Rds On,Min Rds On) :

10V

Avalanche Energy Rating (Eas) :

140 mJ

Mounting Type :

Surface Mount

JEDEC-95 Code :

TO-252

Terminal Form :

Gull wing

FET Type :

P-Channel

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

20m Ω @ 42A, 10V

Series :

HEXFET®

Factory Lead Time :

17 Weeks

Drain to Source Voltage (Vdss) :

55V

DS Breakdown Voltage-Min :

55V

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

170W Tc

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Drain Current-Max (Abs) (ID) :

42A

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain-source On Resistance-Max :

0.02Ohm

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±20V

Number of Terminations :

2

Qualification Status :

Not Qualified

JESD-30 Code :

R-PSSO-G2

Current - Continuous Drain (Id) @ 25°C :

42A Tc

Time@Peak Reflow Temperature-Max (s) :

30

Input Capacitance (Ciss) (Max) @ Vds :

3500pF @ 25V

Case Connection :

DRAIN

Surface Mount :

yes

Published :

1997

Additional Feature :

HIGH RELIABILITY, AVALANCHE RATED

Gate Charge (Qg) (Max) @ Vgs :

180nC @ 10V

JESD-609 Code :

e3

ECCN Code :

EAR99