IRF450

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Voltage - Rated DC :

500V

Configuration :

SINGLE WITH BUILT-IN DIODE

Lead Free :

Contains Lead

Power Dissipation :

150W

JESD-609 Code :

e0

Fall Time (Typ) :

130 ns

Published :

2001

Nominal Vgs :

4 V

Mount :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

2700pF @ 25V

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Drain to Source Breakdown Voltage :

500V

RoHS Status :

Non-RoHS Compliant

Vgs(th) (Max) @ Id :

4V @ 250µA

Terminal Position :

BOTTOM

Number of Terminations :

2

Series :

HEXFET®

Number of Elements :

1

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

48A

Continuous Drain Current (ID) :

12A

Terminal Finish :

Tin/Lead (Sn/Pb)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Weight :

10G

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Through Hole

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Current Rating :

12A

Number of Pins :

2

REACH SVHC :

No SVHC

Packaging :

Tube

Transistor Element Material :

SILICON

Threshold Voltage :

4V

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

PIN/PEG

Avalanche Energy Rating (Eas) :

8 mJ

Case Connection :

DRAIN

Rise Time :

190ns

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

500m Ω @ 12A, 10V

Gate Charge (Qg) (Max) @ Vgs :

120nC @ 10V

Radiation Hardening :

No

Package / Case :

TO-204AA, TO-3

Turn On Delay Time :

35 ns

Power Dissipation-Max :

150W Tc

Drain-source On Resistance-Max :

0.5Ohm

Turn-Off Delay Time :

170 ns