IRF442

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

FET Feature :

-

Input Capacitance (Ciss) (Max) @ Vds :

1225 pF @ 25 V

Vgs (Max) :

±20V

Operating Temperature :

-55°C ~ 150°C (TJ)

Power Dissipation (Max) :

125W (Tc)

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

1.1Ohm @ 4.4A, 10V

Mounting Type :

Through Hole

Product Status :

Active

Supplier Device Package :

TO-3

Drain to Source Voltage (Vdss) :

500 V

Current - Continuous Drain (Id) @ 25°C :

7A (Tc)

Package / Case :

TO-204AA, TO-3

Drive Voltage (Max Rds On, Min Rds On) :

10V

Package :

Bulk

Series :

-

Vgs(th) (Max) @ Id :

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs :

63 nC @ 10 V