IRF430

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

75 W

Radiation Hardening :

No

REACH SVHC :

No SVHC

Package / Case :

TO-204AA, TO-3

Max Operating Temperature :

150 °C

Number of Pins :

2

Min Operating Temperature :

-55 °C

Drain to Source Resistance :

1.5 Ω

Dual Supply Voltage :

500 V

Drain to Source Breakdown Voltage :

500 V

Power Dissipation (Max) :

75W (Tc)

Vgs(th) (Max) @ Id :

4V @ 250µA

Continuous Drain Current (ID) :

4.5 A

RoHS :

Non-Compliant

Rds On (Max) @ Id, Vgs :

1.8Ohm @ 4.5A, 10V

Operating Temperature :

-55°C ~ 150°C (TJ)

Number of Elements :

1

Mount :

Through Hole

On-State Resistance :

10.5 Ω

Schedule B :

8541290080

Package :

Bulk

Drain to Source Voltage (Vdss) :

500 V

Gate Charge (Qg) (Max) @ Vgs :

40 nC @ 10 V

Termination :

Through Hole

Lead Pitch :

11 mm

Input Capacitance (Ciss) (Max) @ Vds :

610 pF @ 25 V

Vgs (Max) :

±20V

Nominal Vgs :

4 V

FET Feature :

-

Lifecycle Status :

Production (Last Updated: 2 years ago)

Product Status :

Active

FET Type :

N-Channel

Mounting Type :

Through Hole

Max Power Dissipation :

75 W

Weight :

12 g

Drive Voltage (Max Rds On, Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

4.5A (Tc)

Series :

HEXFET?

Gate to Source Voltage (Vgs) :

20 V

Supplier Device Package :

TO-204AA (TO-3)