IRC644PBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

12 ns

Gate to Source Voltage (Vgs) :

20V

FET Feature :

Current Sensing

Height :

9.02mm

Vgs (Max) :

±20V

Number of Terminations :

5

JESD-30 Code :

R-PSFM-T5

Vgs(th) (Max) @ Id :

4V @ 250µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

14A Tc

Power Dissipation-Max :

125W Tc

Qualification Status :

Not Qualified

Mounting Type :

Through Hole

Pin Count :

5

Avalanche Energy Rating (Eas) :

550 mJ

Fall Time (Typ) :

29 ns

Gate Charge (Qg) (Max) @ Vgs :

65nC @ 10V

Rise Time :

37ns

Case Connection :

DRAIN

Width :

4.83mm

Package / Case :

TO-220-5

Mount :

Through Hole

Length :

10.67mm

Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Turn-Off Delay Time :

49 ns

DS Breakdown Voltage-Min :

250V

ECCN Code :

EAR99

Terminal Position :

Single

Published :

1997

Weight :

3.000003g

FET Type :

N-Channel

Reach Compliance Code :

Unknown

Peak Reflow Temperature (Cel) :

260

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Continuous Drain Current (ID) :

14A

Series :

HEXFET®

Input Capacitance (Ciss) (Max) @ Vds :

1200pF @ 25V

Pulsed Drain Current-Max (IDM) :

56A

Rds On (Max) @ Id, Vgs :

280m Ω @ 8.4A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.28Ohm

Time@Peak Reflow Temperature-Max (s) :

40

Packaging :

Tube

Number of Channels :

1

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

250V