IRC634PBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 250µA

ECCN Code :

EAR99

Vgs (Max) :

±20V

Rise Time :

21ns

Mount :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

770pF @ 25V

Pin Count :

5

Width :

4.83mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

Turn On Delay Time :

9.6 ns

Published :

1997

Gate Charge (Qg) (Max) @ Vgs :

41nC @ 10V

Drain-source On Resistance-Max :

0.45Ohm

FET Feature :

Current Sensing

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn-Off Delay Time :

42 ns

Power Dissipation-Max :

74W Tc

Number of Channels :

1

Lead Free :

Lead Free

Number of Terminations :

5

Power Dissipation :

74W

Package / Case :

TO-220-5

Height :

9.02mm

Series :

HEXFET®

Mounting Type :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

8.1A Tc

Pulsed Drain Current-Max (IDM) :

32A

Fall Time (Typ) :

19 ns

Operating Temperature :

-55°C~150°C TJ

Current Rating :

8.1A

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

250V

Gate to Source Voltage (Vgs) :

20V

Peak Reflow Temperature (Cel) :

260

JESD-30 Code :

R-PSFM-T5

Reach Compliance Code :

Unknown

Configuration :

Single

Continuous Drain Current (ID) :

8.1A

Case Connection :

DRAIN

Packaging :

Tube

Transistor Element Material :

SILICON

Weight :

3.000003g

Number of Elements :

1

Qualification Status :

Not Qualified

Length :

10.67mm

Voltage - Rated DC :

250V

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

40

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

450m Ω @ 4.9A, 10V

Transistor Application :

SWITCHING