IRC640PBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Avalanche Energy Rating (Eas) :

430 mJ

FET Type :

N-Channel

Height :

9.02mm

Number of Terminations :

5

Drain to Source Voltage (Vdss) :

200V

Qualification Status :

Not Qualified

Length :

10.67mm

Width :

4.83mm

JESD-30 Code :

R-PSFM-T5

Time@Peak Reflow Temperature-Max (s) :

40

Vgs (Max) :

±20V

Published :

1997

Power Dissipation-Max :

125W Tc

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

Configuration :

Single

Fall Time (Typ) :

36 ns

Current - Continuous Drain (Id) @ 25°C :

18A Tc

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

70nC @ 10V

Turn On Delay Time :

14 ns

Continuous Drain Current (ID) :

18A

Operating Mode :

ENHANCEMENT MODE

Pin Count :

5

RoHS Status :

ROHS3 Compliant

Mounting Type :

Through Hole

Turn-Off Delay Time :

45 ns

Pulsed Drain Current-Max (IDM) :

72A

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Number of Elements :

1

Mount :

Through Hole

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 25V

Terminal Position :

Single

DS Breakdown Voltage-Min :

200V

Rds On (Max) @ Id, Vgs :

180m Ω @ 11A, 10V

Gate to Source Voltage (Vgs) :

20V

Series :

HEXFET®

Number of Channels :

1

Package / Case :

TO-220-5

Weight :

3.000003g

Reach Compliance Code :

Unknown

Case Connection :

DRAIN

FET Feature :

Current Sensing

Rise Time :

51ns

Vgs(th) (Max) @ Id :

4V @ 250µA